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| Fast Recovery Epitaxial Diode (FRED) DSEI 2x61 IFAVM = 2x52 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 2x 61-12P D5 Symbol IFRMS IFAVM IFRM IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR Conditions TVJ = 25C VR = VRRM TVJ = 25C VR = 0.8 * VRRM TVJ = 125C VR = 0.8 * VRRM IF = 60 A; TVJ = 150C TVJ = 25C TC = 25C 50/60 Hz, RMS IISOL 1 mA Mounting torque (M4) t = 1 min t=1s Conditions Maximum Ratings (per diode) 100 52 700 450 -40...+150 150 -40...+150 180 2500 3000 1.5 - 2.0 14 - 18 18 A A A A C C C W V~ V~ Nm lb.in. g Features * * * * * * 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour TVJ = TVJM TC = 50C; rectangular; d = 0.5 tP < 10 s; rep. rating; pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine Applications * Antiparallel diode for high frequency switching devices * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability * Low noise switching * Small and light weight Characteristic Values (per diode) typ. max. 2.2 0.5 14 2.15 2.50 1.65 8.3 0.7 0.05 mA mA mA V V V m K/W K/W 60 36 min. 11.2 min. 11.2 max. 50 ns A mm mm m/s VF VT0 rT RthJC RthCK trr IRM dS dA a For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 200 A/s VR = 30 V; TVJ = 25C VR = 540 V; IF = 60 A; -diF/dt = 480 A/s L 0.05 H; TVJ = 100C Creeping distance on surface Creeping distance in air Allowable acceleration 40 32 IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 139 (c) 2001 IXYS All rights reserved 1-2 DSEI 2x 61-12P 90 A 80 70 IF 60 50 40 30 20 10 0 0 1 2 3 V 4 TVJ= 25C TVJ=100C TVJ=150C Qr 12 C 10 8 6 4 2 0 10 TVJ=100C VR= 540V IF=60A IF=120A IF=60A IF=30A 80 A 60 IRM TVJ=100C VR=540V IF=60A IF=120A IF=60A IF=30A max. 40 max. typ. 20 typ. VF 100 -diF/dt A/s 1000 0 0 200 400 -diF/dt 600 800 A/s 1000 D5 Fig. 1 Forward current versus voltage drop. 1.4 1.2 1.0 Kf 0.8 0.6 0.4 0.2 0.0 Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. 60 V 50 VFR 40 30 20 1200 ns 1000 800 tfr 600 400 tfr 200 0 1.0 s 0.8 max. TVJ=100C VR=540V IRM trr 0.6 IF=60A IF=120A IF=60A IF=30A VFR QR 0.4 0.2 typ. 0.0 10 0 TVJ=125C IF=60A 0 200 400 600 diF/dt 0 40 TJ 80 120 C 160 0 200 400 600 -diF/dt A/s 800 1000 A/s 1000 800 Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Fig. 7 Transient thermal impedance junction to case. (c) 2001 IXYS All rights reserved 2-2 |
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